r 20 1 5 10 b 1 / 8 n ??? n - channel mosfet jcs1 4 n50 f t order codes ? marking ? package halogen free ? packaging device weight jcs1 4 n50ft - o - f - n - b jcs1 4 n50ft to - 220mf no tube 2.20 g(typ) ? package ? main characteristics id 1 4 a vd ss 500 v rdson - max @vgs=10v 0.46 qg - typ 37 nc ? ? ??? ? ? ups ? applications ? high frequency switching mode power supply ? electronic ballast ? ups ? ? ? ? c rss ( ? 2 5pf) ? ?? ? ??? ? ? dv/dt ? rohs ? features ? low gate charge ? low c rss (typical 25 pf ) ? fast switching ? 100% avalanche tested ? improved dv/ dt capability ? rohs product ? order message
r jcs1 4 n50ft 20 1 5 10 b 2 / 8 ?? absolute ratings (tc=25 ) * ?? *drain current limited by maximum junction temperature ? parameter symbol ? value unit ? ??? drain - source voltage v dss 500 v ? drain current - c ontinuous i d t=25 t=100 1 4 .0* a 8* a ? ? 1 dr ain current - p ulse note 1 i dm 52* a ??? gate - source voltage v gss 30 v ? ? 2 single pulsed avalanche energy note 2 e as 8 45 mj ? ? 1 avalanche current note 1 i ar 13.0 a ?? ? 1 repetitive a valanche e nergy note 1 e ar 5.0 mj ? ? ? 3 peak diode recovery dv/dt note 3 dv/dt 4.5 v/ns ? power dissipation p d t c =25 - derate above 25 50 w 0. 4 w/ ??? operating and storage temperature range t j t stg - 55 +150 ?? maximum lead temperature for soldering pu rposes t l 300
r jcs1 4 n50ft 20 1 5 10 b 3 / 8 e lectrical c haracteristic ? parameter symbol tests conditions min typ max units ? off C characteristics ? ?? drain - source voltage bv dss i d =250a, v gs =0v 5 00 - - v ?? breakdown voltage temperature coefficient bv dss /t j i d =250a, referenced to 25 - 0. 5 3 - v/ ???? zero gate voltage drain current i dss v ds =500v, v gs =0v, t c = 2 5 - - 10 a v ds =400v, t c = 1 2 5 - - 10 0 a ?? gate - body l eakage c u rrent, f orward i gssf v ds =0v, v gs =30v - - 100 na ?? gate - body l eakage c urrent, r everse i gssr v ds =0v, v gs = - 30v - - - 100 na ?? on - characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 3.0 - 5.0 v ?? static drain - source on - r esistance r ds(on) v gs =10v , i d =6.5a - 0.3 7 0.4 6 ? forward transconductance g fs v ds = 40v , i d = 6.5 a note 4 - 15 - s ? dynamic characteristics input c apacitance c iss v ds =25v, v gs =0v, f=1.0mh z - 1 56 0 2090 pf output c apacitance c oss - 2 1 0 260 pf reverse t ransfer c apacitance c rss - 2 5 30 pf
r jcs1 4 n50ft 20 1 510 b 4 / 8 e lectrical c haracteristics t hermal characterist ic ? parameter symbol ? max unit jcs1 4 n50ft ??? thermal resistance, junction to case rth(j - c) 2.5 0 /w ? thermal resistance, junction to ambient rth(j - a) 62.5 /w ? parameter symbol tests conditions min typ max units switching C characteristics ?? turn - on delay time t d (on) v dd =250v,i d =13a,r g =25? note 4 5 - 90 180 ns ? turn - on ris e time t r - 1 6 0 2 7 0 ns ?? turn - off delay time t d (off) - 1 5 0 26 0 ns ?? turn - off fall time t f - 60 140 ns ? total gate charge q g v ds =400v , i d =13a v gs =10v note 4 5 - 37 5 0 nc ? ? gate - source charge q gs - 10.9 - nc ? ? gate - drain charge q gd - 17.2 - nc ? ???? drain - source diode characteristics and maximum ratings maximum continuous drain - source diode forward current i s - - 13 a maximum pulsed drain - source diode forward current i sm - - 52 a maximum c ontinuous drain - source diode forward current v sd v gs =0v, i s =13a - 1.4 v ?? reverse r ecovery t ime t rr v gs =0v, i s =13a di f /dt=100a/s (note 4) 410 ns ? reverse r ecovery c harge q rr 4.5 c ? 1 ? ? 2 l=9.0mh, i as =13a, v dd =50v, r g =25 ?, ? t j = 2 5 ? 3 i sd 13a,di/dt 200a/s, vddbv dss , ? t j = 2 5 ? 4 300s , ?? 2 ? 5 ??? notes: 1 pulse width l imited by maximum junction temperature 2 l=9.0mh, i as =13a, v dd =50v, r g =25 ?,starting t j =25 3 i sd 13a,di/dt 200a/s, vddbv dss , starting t j =25 4 pulse test pulse width 300s, duty cycle2 5 essentially independent of operating temperature
r jcs1 4 n50ft 20 1 5 10 b 5 / 8 electrical characteristics (curves) on - region characteristics transfer characteristics on - resistance variation vs drain current and gate voltage body diode forward voltage variation vs. source cur rent and temperature capacitance characteristics cap acitance characteristics 0 2 4 6 8 10 12 0 10 20 30 40 v ds =100v v ds =250v q g toltal gate charge [nc] v gs gate source voltage[v] v ds =400v 0.1 1 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 2 5 1 5 0 v sd source-drain voltage[v] i dr reverse drain current[a] 10 0 10 1 10 0 10 1 i d drain current[a] v ds drain-source voltage[v] vgs top: 15.0v 10.0v 9.0v 8.0v 7.0v 6.5v buttom : 5.5v 0 5 10 15 20 0.2 0.4 0.6 v gs =20v r ds(on) drain-source on resistance [] i d drain current [a] v gs =10v 2 4 6 8 10 0.1 1 10 notes 1.250s pulse test 2.v ds =40v i d drain current[a] v gs gate-source voltage[v] 2 5 1 5 0
r jcs1 4 n50ft 20 1 5 10 b 6 / 8 electrical characteristics (curves) breakdown voltage variation vs. temperature on - resistance variation vs. temperature maximum safe operating area maximum drain current vs . case temperature transient thermal response curve 1 e - 5 1 e - 4 1 e - 3 0 . 0 1 0 . 1 1 1 0 0 . 0 1 0 . 1 1 t 2 t 1 d = 0 . 5 0 . 2 0 . 1 0 . 0 5 0 . 0 2 z jc (t) thermal response t 1 s q u a r e w a v e p u l s e d u r a t i o n [ s e c ] s i n g l e p u l s e 0 . 0 1 n o t e s : 1 z j c ( t ) = 2 . 5 / w m a x 2 d u t y f a c t o r , d = t 1 / t 2 3 t j m - t c = p d m * z j c ( t ) p d m 25 50 75 100 125 150 0 2 4 6 8 10 12 14 i d drain current [a] t c c a s e t e m p e r a t u r e [ ] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 operation in this area is limited by r ds(on) note: 1 t c = 2 5 2 t j = 1 5 0 3 single pulse 10s 1ms 100s 10ms 100ms dc i d drain current [a] v ds drain-source voltage [v] -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 notes 1. v gs =0v 2. i d =250 ?? a bv ds (normalized) t j [ ] -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes 1. v gs =10v 2. i d =6.5a r d(on) (normalized) t j [ ]
r jcs1 4 n50ft 20 1 5 10 b 7 / 8 ? package mechanical data to - 220 m f unit mm
r jcs1 4 n50ft 20 1 5 10 b 8 / 8 ? 1. ????????? ??? ?? ???? 2. ??? ? ?? 3. ????? ?? ??? 4. ??? note 1. jilin sino - microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino - microelectronics co., ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ?? ?? 99 ? 132013 ? 86 - 432 - 6 4678411 86 - 432 - 6 4665812 ? h tu www.hwdz.com.cn ut h ? ? ?? 99 ? 132013 86 - 432 - 6 4675588 6 4675688 6 4678411 - 3098/3099 : 86 - 432 - 6 4671533 contact jilin sino - microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 6 4678411 fax 86 - 432 - 6 4665812 web site h tu www.hwdz.com.cn ut h market department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 6 4675588 6 4675688 6 46784 11 - 3098/3099 fax: 86 - 432 - 6 4671533
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